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2008-04-07 rev. 2.5 page 1 spu03n60s5 spd03n60s5 cool mos? power transistor v ds 600 v r ds(on) 1.4 ? i d 3.2 a feature ? new revolutionary high voltage technology ? ultra low gate charge ? periodic avalanche rated ? extreme d v /d t rated ? ultra low effective capacitances ? improved transconductance pg-to251 pg-to252 1 3 2 1 3 2 type package ordering code spu03n60s5 p g -to251 q67040-s4227 spd03n60s5 p g -to252 q67040-s4187 marking 03n60s5 03n60s5 maximum ratings parameter symbol value unit continuous drain current t c = 25 c t c = 100 c i d 3.2 2 a pulsed drain current, t p limited by t j ma x i d p uls 5.7 avalanche energy, single pulse i d = 2.4 a, v dd = 50 v e as 100 mj avalanche energy, repetitive t ar limited by t jmax 1 ) i d = 3.2 a, v dd = 50 v e ar 0.2 avalanche current, repetitive t ar limited by t j ma x i ar 3.2 a gate source voltage v gs 20 v gate source voltage ac (f >1hz) v gs 30 power dissipation, t c = 25c p tot 38 w operating and storage temperature t j , t st g -55... +150 c
2008-04-07 rev. 2.5 page 2 spu03n60s5 spd03n60s5 maximum ratings parameter symbol value unit drain source voltage slope v ds = 480 v, i d = 3.2 a, t j = 125 c d v /d t 20 v/ns thermal characteristics parameter symbol values unit min. typ. max. thermal resistance, junction - case r thjc - - 3.3 k/w thermal resistance, junction - ambient, leaded r thja - - 75 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 2) r thja - - - - 75 50 soldering temperature, *) 1.6 mm (0.063 in.) from case for 10s t sold - - 260 c electrical characteristics, at t j=25c unless otherwise specified parameter symbol conditions values unit min. typ. max. drain-source breakdown voltage v (br)dss v gs =0v, i d =0.25ma 600 - - v drain-source avalanche breakdown voltage v (br)ds v gs =0v, i d =3.2a - 700 - gate threshold voltage v gs(th) i d =135 , v gs = v ds 3.5 4.5 5.5 zero gate voltage drain current i dss v ds =600v, v gs =0v, t j =25c, t j =150c - - 0.5 - 1 70 a gate-source leakage current i gss v gs =20v, v ds =0v - - 100 na drain-source on-state resistance r ds(on) v gs =10v, i d =2a, t j =25c t j =150c - - 1.26 3.4 1.4 - *) to252: reflow soldering, msl3; to251: wavesoldering
2008-04-07 rev. 2.5 page 3 spu03n60s5 spd03n60s5 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. characteristics transconductance g fs v ds 2* i d * r ds(on)max , i d =2a - 1.8 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 420 - pf output capacitance c oss - 150 - reverse transfer capacitance c rss - 3.6 - turn-on delay time t d(on) v dd =350v, v gs =0/10v, i d =3.2a, r g =20 - 35 - ns rise time t r - 25 - turn-off delay time t d(off) - 40 - fall time t f - 15 22.5 gate charge characteristics gate to source charge q gs v dd =350v, i d =3.2a - 3.5 - nc gate to drain charge q gd - 7 - gate charge total q g v dd =350v, i d =3.2a, v gs =0 to 10v - 12.4 16 gate plateau voltage v (plateau) v dd =350v, i d =3.2a - 8 - v 1 repetitve avalanche causes additional power losses that can be calculated as p av = e ar * f . 2 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air.
2008-04-07 rev. 2.5 page 4 spu03n60s5 spd03n60s5 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. inverse diode continuous forward current i s t c =25c - - 3.2 a inverse diode direct current, pulsed i sm - - 5.7 inverse diode forward voltage v sd v gs =0v, i f = i s - 1 1.2 v reverse recovery time t rr v r =350v, i f = i s , d i f /d t =100a/s - 1000 1700 ns reverse recovery charge q rr - 2.3 - c typical transient thermal characteristics symbol value unit symbol value unit typ. typ. thermal resistance r th1 0.054 k/w r th2 0.103 r th3 0.178 r th4 0.757 r th5 0.682 r th6 0.202 thermal capacitance c th1 0.00005232 ws/k c th2 0.0002034 c th3 0.0002963 c th4 0.0009103 c th5 0.002084 c th6 0.024 external heatsink t j t case t amb c th1 c th2 r th1 r th,n c th,n p tot (t)
2008-04-07 rev. 2.5 page 5 spu03n60s5 spd03n60s5 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 4 8 12 16 20 24 28 32 w 40 spu03n60s5 p tot 2 safe operating area i d = f ( v ds ) parameter : d = 0 , t c =25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 a i d tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms dc 3 transient thermal impedance z thjc = f ( t p ) parameter: d = t p / t 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s t p -2 10 -1 10 0 10 1 10 k/w z thjc 4 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 10 s, v gs 0 5 10 15 v 25 v ds 0 1 2 3 4 5 6 7 8 a 10 i d 7v 7.5v 8v 8.5v 9v 10v 6.5v 20v 12v
2008-04-07 rev. 2.5 page 6 spu03n60s5 spd03n60s5 5 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 2 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 1 2 3 4 5 6 8 spu03n60s5 r ds(on) typ 98% 6 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t p = 10 s 0 4 8 12 v 20 v gs 0 1 2 3 4 5 6 a 8 i d 7 typ. gate charge v gs = f ( q gate ) parameter: i d = 3.2 a pulsed 0 2 4 6 8 10 12 14 16 nc 19 q gate 0 2 4 6 8 10 12 v 16 spu03n60s5 v gs 0.2 v ds max 0.8 v ds max 8 forward characteristics of body diode i f = f (v sd ) parameter: t j , t p = 10 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -2 10 -1 10 0 10 1 10 a spu03n60s5 i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%)
2008-04-07 rev. 2.5 page 7 spu03n60s5 spd03n60s5 9 avalanche soa i ar = f ( t ar ) par.: t j 150 c 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s t ar 0 0.5 1 1.5 2 2.5 a 3.5 i ar t j(start) =25c t j(start) =125c 10 avalanche energy e as = f ( t j ) par.: i d = 2.4 a, v dd = 50 v 20 40 60 80 100 120 c 160 t j 0 20 40 60 80 mj 120 e as 11 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j 540 560 580 600 620 640 660 680 v 720 spu03n60s5 v (br)dss 12 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 10 20 30 40 50 60 70 80 v 100 v ds 0 10 1 10 2 10 3 10 4 10 pf c c iss c oss c rss
2008-04-07 rev. 2.5 page 8 spu03n60s5 spd03n60s5 definition of diodes switching characteristics
2008-04-07 rev. 2.5 page 9 spu03n60s5 spd03n60s5 p g -to252-3-1, pg-to252-3-11, pg-to252-3-21 (d-pak)
2008-04-07 rev. 2.5 page 10 spu03n60s5 spd03n60s5 pg-to251-3-1, pg-to251-3-21 (i-pak)
2008-04-07 rev. 2.5 page 11 spu0 3 n60 s5 spd0 3 n60 s5

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